| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| IC63LV1024 IC63LV1024-8TI IC63LV1024-10B IC63LV102 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM
RES CH 68.1 EW 1%
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Electronic Theatre Controls, Inc.
ICSI
Integrated Circuit Solution Inc
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC61LV5128 IC61LV5128-10K IC61LV5128-10KI IC61LV51 |
512K x 8 HIGH-SPEED CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| TMM2063AP-10 TMM2063AP-12 TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
120ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
100ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
|
Toshiba Semiconductor
|
| IDT7132SA100L48I IDT71321SA55TF IDT7142LA35CI IDT7 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 55 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 25 ns, PQFP64
P-Channel 1.8V Specified PowerTrench MOSFET 2K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 20 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 高K × 8双端口静态RAM的中
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
http://
|
| IC61C256AH IC61C256AH-10J IC61C256AH-10N IC61C256A |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
32K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| K6R4004C1C-C K6R4004C1C-I20 K6R4004C1C-C10 K6R4004 |
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAM5V的工作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT7052 IDT7052S IDT7052L IDT7052S_L 7052_DS_13624 |
2K x 8 FourPortTM RAM
HIGH-SPEED 2K X 8 FOURPORT STATIC RAM
HIGH-SPEED 2K x 8 FourPortTM STATIC RAM
From old datasheet system
|
IDT
Integrated Device Technology, Inc.
|
